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| PR IM EL Y CMPD7006 AR IN CMPD7006A CMPD7006C CMPD7006S Central TM Semiconductor Corp. SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode configurations, manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-23 surface mount case. These devices are designed for applications requiring high voltage switching diodes. SOT-23 CASE The following configurations are available: CMPD7006 CMPD7006A CMPD7006C CMPD7006S SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: C7006 C706A C706C C706S MAXIMUM RATINGS PER DIODE: (TA=25C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1.0 s Forward Surge Current, tp=1.0 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance P E R LI IN M VRRM IF IFRM IFSM PD TJ, Tstg JA IFSM SYMBOL VR RY A 600 600 100 300 4.0 1.0 350 -65 to +150 357 UNITS V V mA mA A A mW C C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=480V 7.0 IR VR=480V, TA=150C BVR IR=1.0A 600 675 VF IF=10mA 0.88 VF IF=50mA 1.04 VF IF=100mA 1.16 CT VR=0V, f=1.0 MHz trr IR=IF=10mA, RL=100, Rec. to 1.0mA MAX 100 100 1.0 1.2 1.4 5.0 500 UNITS nA A V V V V pF ns R0 (8-December 2003) Central TM Semiconductor Corp. P L RE IM Y AR INCMPD7006 CMPD7006A CMPD7006C CMPD7006S SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: SEE PREVIOUS PAGE 2 1 2 1 2 1 2 1 D1 D2 D1 D2 D1 D2 3 3 3 3 LEAD CODE: CMPD7006 1) Anode 2) No Connection 3) Cathode LEAD CODE: CMPD7006A 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 LEAD CODE: CMPD7006C 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 LEAD CODE: CMPD7006S 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 R0 (8-December 2003) |
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